Bolometric detector production comprises use of sacrificial auxiliary layer to connect reading circuit to bolometric substrate of polycrystalline silicon to detect infrared radiation

摘要

The production of a bolometric detector comprises, from a reading circuit produced on a silicon substrate (1): (a) forming a first auxiliary sacrificial layer (3) on the silicon substrate, destined to be removed after the realization of the detector in order to thermally decouple the reading circuit of the detection module; and (b) forming on this sacrificial layer a layer of bolometric material of amorphous silicon (5) and electrodes to carry the necessary electric signals for the operation of the bolometer and to send the signal resulting from the detection of infrared radiation by the bolometer to the reading circuit. The layer of bolometric material is subjected to a laser radiation to transform it into a polycrystalline silicon. An Independent claim is also included for a bolometric detector using polycrystalline silicon as the bolometric material.