Magnetic memory with write inhibit selection incorporates free layer made from amorphous or nanocrystalline alloy and with selected operating temperature close to its compensation temperature

摘要

A magnetic memory with write inhibit selection, of which each memory point is made up of a magnetic tunnel junction (70). The latter comprises a trapped magnetic layer (71) with hard magnetization, a free magnetic layer (73), the magnetization of which may be reversed and an insulating layer (72), interposed between the trapped and free magnetic layers and in contact with each other. The free layer is made from an amorphous or nanocrystalline alloy based on a rare earth and a transition metal, the magnetic order of this alloy being of a ferromagnetic type and the selected operating temperature of the memory is close to the compensation temperature of the alloy. An Independent claim is also included for a method of writing into such a magnetic memory.