METHOD FOR CONTROLLING SOLID ELECTRONIC PROPERTY BY CRYSTAL STRUCTURE DISTORTION, AND OXIDE OBTAINED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for controlling solid electronic physical properties of transition metal oxide, perovskite and laminar perovskite oxide by their crystal structure distortion which can be utilized for VLSI (Very Large Scale Integration), high-temperature superconduction, switching, ferroelectric memory, etc., and the oxide obtained by this method.;SOLUTION: The method for controlling the solid electronic physical properties by the crystal distortion comprises controlling the electronic states, such as electrical conductivity and magnetism, by adjusting the relative arrangements of MO₆ octahedrons in the perovskite type oxide composed of the MO₆ octahedrons consisting of a metallic element M and six oxygens O or the oxide analogues thereof by pressure impression, magnetic field impression, electric field impression, thin film formation, or element substitution.;COPYRIGHT: (C)2004,JPO