IMPROVEMENT IN SENSITIVITY AND SELECTIVITY OF SPV (SURFACE PHOTOELECTRIC VOLTAGE METHOD) NOX GAS SENSOR USING METAL OXIDE MODIFIED MESOPOROUS SIO2 THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide an NO_X sensor having a higher function by developing and using a new metal oxide modified mesoporous SiO₂ thin film.;SOLUTION: The metal oxide modified mesoporous SiO₂ thin film is obtained by mixing an alkyl ammonium surfactant, an orthosilicic acid tetraalkyl and a metal salt in an alcohol, hydrolyzing an acidic substance while regulating to a low pH to a sol solution, dropping the solution to the substrate, rotating the solvent at a high speed, evaporating the solvent, and obtaining an organic inorganic composite compound M_xO_y/SiO₂ thin film having a three-dimensional structure formed on the substrate by gelating, and then sintering the thin film.;COPYRIGHT: (C)2004,JPO