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OVER-CURRENT DETECTION CIRCUIT OF SINGLE PHASE LOAD SUBJECTED TO PWM VOLTAGE CONTROL BY MOS TRANSISTOR

机译:MOS晶体管控制PWM电压的单相负载过电流检测电路

摘要

PPROBLEM TO BE SOLVED: To provide an over-current detection circuit capable of accurately detecting an over-current state of a load current even when an on-time of a MOS transistor is short in the case that the MOS transistor is used to apply PWM voltage control to a single phase load such as a single phase DC motor. PSOLUTION: The over-current detection circuit uses a subtractor circuit to detect a source-drain voltage of the PMOS transistor. When the PMOS transistor is conductive, the detected source-drain voltage is A/D-converted and the result is directly compared with an over-current discrimination reference voltage to detect an over-current. Simultaneously, the source-drain voltage is sampled and held when the PMOS transistor is conductive, and a sampled-held value is given to the subtractor circuit in place of a drain voltage to prevent an output of the subtractor circuit from highly swinging when the PMOS transistor is nonconductive. PCOPYRIGHT: (C)2004,JPO&NCIPI
机译:

要解决的问题:提供一种即使在使用MOS晶体管的情况下即使MOS晶体管的导通时间短时也能够准确地检测负载电流的过电流状态的过电流检测电路。将PWM电压控制应用于单相负载(例如单相DC电动机)。

解决方案:过电流检测电路使用减法器电路来检测PMOS晶体管的源极-漏极电压。当PMOS晶体管导通时,将检测到的源极-漏极电压进行A / D转换,并将结果直接与过电流判别基准电压进行比较以检测过电流。同时,当PMOS晶体管导通时,对源极-漏极电压进行采样并保持,并且将采样保持值提供给减法器电路以代替漏极电压,以防止当PMOS晶体管时减法器电路的输出高度摆幅晶体管不导电。

版权:(C)2004,日本特许厅和日本国家唱片公司

著录项

  • 公开/公告号JP2004247834A

    专利类型

  • 公开/公告日2004-09-02

    原文格式PDF

  • 申请/专利权人 DENSO CORP;

    申请/专利号JP20030033645

  • 发明设计人 ISOMURA HIROBUMI;ITO KENJI;

    申请日2003-02-12

  • 分类号H03K17/08;H02P7/29;H03K17/687;

  • 国家 JP

  • 入库时间 2022-08-21 23:31:12

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