SECONDARY PROCESSING METHOD FOR CORRECTED PART OF PHOTOMASK DEFECT BY CHARGE PARTICLE MASK DEFECT CORRECTING DEVICE

摘要

PROBLEM TO BE SOLVED: To realize high-quality defect correction of a photomask without leaving a halo component or re-deposition in the mask defect correction using ion beams or the mask defect correction using electron beams.;SOLUTION: The halo component in a corrected part of a white defect, re-deposition near a black defect or deposition near a white defect is removed by an electron beam processing device without damages in the corrected part of the white defect or black defect by a mask defect correcting device using ion beams or by a mask defect correcting device using electron beams. As for the halo component in the corrected part 3 of the white defect 3, the site 6 where the halo component is present is detected and etched with electron beams 4 while introducing water vapor into near the beam irradiation position from a gas gun 5 to remove the halo component 6. The part recognized as a re-deposition region 8 of the black defect material is etched with an electron beam 4 to remove the re-deposition while xenon fluoride is introduced to flow from a gas gun 9.;COPYRIGHT: (C)2005,JPO&NCIPI