THIN FILM TRANSISTOR AND ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE USING SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor and a method for manufacturing the same which is capable of resisting larger AC stress, and further having high performance and high reliability.;SOLUTION: An underlying insulating film 11 and a semiconductor layer 12 crystallized using an XeCl excimer laser are formed on a translucent glass substrate 10. A gate insulating film 13 and a gate electrode 15 are formed on the semiconductor layer 12. Impurities are ion-implanted into the semiconductor layer 12 using the gate electrode 15 as a mask. An interlayer dielectric 16, a source electrode 18, a drain electrode 19, and a passivation film 20 are formed on the gate electrode 15, and a deuteration treatment is then performed in a plasma atmosphere containing heavy hydrogen gas to combine heavy hydrogen with the grain boundary of the semiconductor layer 12 or a dangling bond of silicon (an interface state) existing on the interface between silicon and the gate insulating film 13. Thereby Si-D bonds 14 hard to be broken by an AC stress are formed.;COPYRIGHT: (C)2005,JPO&NCIPI