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TM mode dielectric resonator, TM mode dielectric resonator device and high frequency band pass filter device

机译:TM模式电介质谐振器,TM模式电介质谐振器装置和高频带通滤波器装置

摘要

PURPOSE: To provide a TM mode dielectric resonator and a TM mode dielectric resonator device, which are thin compared with conventional cases and which has high no-load Q. ;CONSTITUTION: In the TM mode dielectric resonator having a dielectric substrate 10 held between a pair of electrodes 6 and 6E, at least one of them is a thin film laminated electrodes where thin film conductors 1-5 and thin film dielectrics 30-1 to 30-4 are alternately laminated, and the film thickness and the dielectric constants of the respective thin film dielectrics are set in such a way that the electromagnetic field of a main TM mode resonator where the film conductors 1-5 and the other electrode 6e hold the dielectric substrate 10 and the electromagnetic field of an auxiliary TM made resonator where the thin film dielectrics E30-1 to E30-4 are held by a pair of thin film conductors E1-E5 become the common mode. The film thickness of the respective thin film conductors except for the thin film conductor formed farthest from the dielectric substrate 10 is set to be thinner than the skin depth of a resonance frequency so that the electromagnetic field of the main TM mode resonator is connected with the electromagnetic field of the respective auxiliary TM mode resonators.;COPYRIGHT: (C)1996,JPO
机译:目的:提供一种TM模式介质谐振器和一种TM模式介质谐振器,与常规情况相比,它们更薄并且空载Q值高。一对电极6和6E,其中至少一个是薄膜层叠电极,其中薄膜导体1-5和薄膜电介质30-1至30-4交替层叠,并且薄膜厚度和介电常数设置各自的薄膜电介质,使得主TM模式谐振器的电磁场(薄膜导体1-5和另一个电极6e保持电介质基板10)和辅助TM谐振器的电磁场(其中薄导体薄膜电介质E30-1至E30-4由一对共模的薄膜导体E1-E5保持。将除距电介质基板10最远的薄膜导体以外的各薄膜导体的膜厚设定得比共振频率的趋肤深度薄,以使主TM模式共振器的电磁场与共振器的电磁场连接。辅助TM模式谐振器的电磁场。;版权:(C)1996,日本特许厅

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