METHOD FOR MANUFACTURING MICROSTRUCTURE, MULTILAYER FILM STRUCTURE, AND MULTILAYER FILM INTERMEDIATE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To accurately form a microstructure such as a wiring pattern by using a very simple method.;SOLUTION: A strain relaxation silicon germanium layer 12 with through-dislocation 14 is epitaxially grown on a silicon substrate 11, and then a metallic layer 13 is formed to manufacture a multilayer film intermediate structure 10. Further, heat treatment is applied to the multilayer film intermediate structure 10 to diffuse metal elements in the metallic layer 13 via the through-dislocation 14 to form a microstructure 16 at a boundary face 15 between the silicon substrate 11 and the silicon germanium layer 12.;COPYRIGHT: (C)2004,JPO&NCIPI