METHOD FOR MANUFACTURING SEMICONDUCTOR MEMBER FORMED WITH RECESSED STRUCTURE AND SEMICONDUCTOR MEMBER FORMED WITH RECESSED STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a structure having nano-sized holes or grooves with a high aspect ratio based on a design on the surface of a semiconductor.;SOLUTION: The recessed structure with the high aspect ratio is formed by forming recessed portions directly or via a resist film on the surface of a semiconductor member by a physical operation, bringing an electrolyte into contact with the surface of the semiconductor on which the recessed portions are formed, performing anodization by using the inside of the semiconductor as a positive electrode, and deepening the recessed portions. The method can enlarge the aspect ratio of the recessed structure, even if it is a minute recessed structure of a nano meter size.;COPYRIGHT: (C)2004,JPO