Design and method of associative memory cell

摘要

Comparison timing and method of pre-charge is disclosed as well as the design procedure of the CAM cell. CAM cell (300) includes a (352) P-channel transistor by using a mirror effect, to convey the result of the comparison match line (314). In one embodiment, CAM cell (300), further, the dual-end CAM memory cell having a first memory (342), (344), the data comparison bit line of a negative comparison bit line of the positive (320), the mask comparison circuit comprising N-channel transistor and the second (346) N-channel transistor (330), the first dual-end CAM memory core cells in the second for storing data (348), and mask the match line (314) including (362) P-channel transistor of the second to tell the state.