ION IMPLANTATION METHOD, ION IMPLANTATION DEVICE, AND BEAM TRANSPORT PIPE FOR THE ION IMPLANTATION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an ion implantation method, an ion implantation device, and a beam transport pipe for the ion implantation device capable of controlling an ion implantation angle without complicating the structure of a stage for holding a processed substrate.;SOLUTION: The ion implantation method of implanting ion by irradiating ion beams IB on a semiconductor substrate W through a deflector consists of a process of slanting a beam irradiation face 14a of the deflector 14 against the semiconductor substrate in a stationary state, and a process of irradiating the ion beams IB from the slanted beam irradiation face 14a and implanting ion into the semiconductor substrate W. With this, it is unnecessary to provide the stage 8 holding the semiconductor substrate W with a slanting mechanism, and the structure of a stage is simplified.;COPYRIGHT: (C)2004,JPO&NCIPI