首页> 外国专利> WAVEGUIDE TYPE FARADAY ROTATION ELEMENT AND ITS MANUFACTURING METHOD

WAVEGUIDE TYPE FARADAY ROTATION ELEMENT AND ITS MANUFACTURING METHOD

机译:波导型法拉第旋转元件及其制造方法

摘要

PROBLEM TO BE SOLVED: To manufacture a waveguide type Faraday rotation element which can be integrated with an optical device and has high performance.;SOLUTION: An InP:Mn/InGaAsP core layer 12 wherein an InP:Mn layer 12a is interposed between InGaAsP layers 12b is formed on an InP cladding layer 11 and an InP:Mn cladding layer 13 is formed thereon to form the waveguide type Faraday rotation element 10. Thereby, the waveguide type Faraday rotation element 10 can be manufactured by using an InP based semiconductor material, a region where light transmitted in the waveguide overlaps with a layer containing Mn is increased and interaction of light and Mn can be heightened. Mn can be effectively introduced to the InP:Mn layer 12a and the InP:Mn cladding layer 13 by introducing Mn when the InP:Mn layer 12a or the InP:Mn cladding layer 13 is formed or when a semiconductor layer to be the underlayer layer of these layers is grown.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:制造可与光学装置集成并且具有高性能的波导型法拉第旋转元件;解决方案:InP:Mn / InGaAsP核心层12,其中InP:Mn层12a插入InGaAsP层之间在InP包层11上形成12b,并在其上形成InP:Mn包层13以形成波导型法拉第旋转元件10。从而,可以通过使用InP基半导体材料来制造波导型法拉第旋转元件10,在波导中传输的光与包含Mn的层重叠的区域增加,并且可以增强光与Mn的相互作用。通过在形成InP:Mn层12a或InP:Mn包层13时或当半导体层成为基底层时,通过引入Mn,可以将Mn有效地引入到InP:Mn层12a和InP:Mn包层13中。这些层中的层已生长。;版权所有:(C)2004,日本特许厅

著录项

  • 公开/公告号JP2004070012A

    专利类型

  • 公开/公告日2004-03-04

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20020229349

  • 发明设计人 HARA SHINJIRO;

    申请日2002-08-07

  • 分类号G02F1/095;G02B6/00;G02B6/12;

  • 国家 JP

  • 入库时间 2022-08-21 23:26:21

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