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The ITO sintering body and its production manner and membrane manner null of the ITO film which uses the aforementioned ITO sintering

机译:使用上述ITO烧结的ITO膜的ITO烧结体及其制造方式和膜方式无效

摘要

PROBLEM TO BE SOLVED: To obtain ITO coating having stable transparency and electric conductivity and furthermore free from defects such as pinholes. SOLUTION: The raw material of an ITO sintered compact consisting essentially of indium oxide and tin oxide is incorporated with SiO2 and MgO or SiO2 , MgO and Al2 O3 respectively in prescribed rations, which is subjected to compressive molding under relatively low pressure of 0.2 to 20MPa into a pellet shape or the like, and heating and sintering are executed. When ITO coating is formed by vacuum-deposition or sputtering with this ITO sintered compact as an evaporating source or a target, the ITO coating having a tin content same as that in the ITO sintered compact and furthermore free from pinholes or the like can be formed.
机译:解决的问题:获得具有稳定的透明性和导电性并且此外没有诸如针孔之类的缺陷的ITO涂层。解决方案:将主要由氧化铟和氧化锡组成的ITO烧结体的原料分别以规定的比例与SiO2和MgO或SiO2,MgO和Al2 O3混合,然后在0.2至20MPa的相对较低压力下进行压缩成型制成颗粒状等,然后进行加热和烧结。当以该ITO烧结体作为蒸发源或靶通过真空沉积或溅射形成ITO涂层时,可以形成锡含量与ITO烧结体中的锡含量相同并且没有针孔等的ITO涂层。 。

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