首页>
外国专利>
Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
展开▼
机译:具有O2和NH3的后蚀刻光刻胶带,用于有机硅玻璃低K介电蚀刻应用
展开▼
页面导航
摘要
著录项
相似文献
摘要
Process for stripping photoresist from a semiconductor wafer formed with at least one layer of OSG dielectric. The stripping process may be formed in situ or ex situ with respect to other integrated circuit fabrication processes. The process includes a reaction may be oxidative or reductive in nature. The oxidative reaction utilizes an oxygen plasma. The reductive reaction utilizes an ammonia plasma. The process of the present invention results in faster ash rates with less damage to the OSG dielectric than previously known stripping methods.
展开▼