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Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices
Reduction of noise, and optimization of magnetic field sensitivity and electrical properties in magnetic tunnel junction devices
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机译:降低噪声,并优化磁隧道结器件中的磁场灵敏度和电性能
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摘要
Magnetic tunneling junction devices (MTJ) useful for sensing and memory applications and characterized by reduced resistance, magnetic noise, increased sensitivity, and increased magnetoresistance are disclosed herein. A method for fabrication of said MTJ is also disclosed wherein a series of materials are layered upon a substrate under controlled conditions, patterned and subjected to a period of annealing for simultaneously optimizing a plurality of performance parameters.
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