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Method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas, thin films and fluid ejection devices including same
Method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas, thin films and fluid ejection devices including same
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机译:使用氮气残留气体形成混合相压缩钽薄膜的方法,薄膜以及包括该薄膜的流体喷射装置
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摘要
The invention includes a method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas. The method of the present invention may include selecting a pressure of nitrogen residual gas during plasma sputtering corresponding to a predefined ratio of beta- to alpha-tantalum. The method may be performed at substrate temperatures less than 300° C. Mixed-phase compressive tantalum thin films and fluid ejection devices are also disclosed.
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