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Method for fabricating copper damascene structures in porous dielectric materials
Method for fabricating copper damascene structures in porous dielectric materials
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机译:在多孔介电材料中制造铜镶嵌结构的方法
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摘要
A method for manufacturing integrated circuit devices including metal interconnect structures. The method includes forming a first dielectric material overlying a surface of a semiconductor substrate. The method also includes forming a metal damascene structure in the first dielectric material, which surrounds the metal damascene structure. The method selectively removes the first dielectric material surrounding a portion of the metal damascene structure to expose the portion of the metal damascene structure. The method forms a porous dielectric material surrounding a vicinity of the exposed portion of the metal damascene structure, whereupon the porous dielectric material has a dielectric constant ranging from no greater than 2.6 but greater than 1.
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