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Method of making a bipolar transistor having a reduced base transit time
Method of making a bipolar transistor having a reduced base transit time
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机译:制备具有减少的基极渡越时间的双极晶体管的方法
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摘要
A bipolar transistor has a high performance and high reliability, which are obtained by enhancing a withstanding voltage between an emitter and a base. The bipolar transistor includes a first impurity diffusion layer in a semiconducting substrate, an opening disposed in the first conductive film. A third impurity diffusion layer is formed so as to contain the second diffusion layer and side walls are formed on the side walls of the opening. A fourth impurity diffusion layer in the third impurity diffusion layer is formed in the opening surrounded by the side walls.
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