首页> 外国专利> Semiconductor device, electro-optical device substrate, liquid crystal device substrate and manufacturing method therefor, liquid crystal device, and projection liquid crystal display device and electronic apparatus using the liquid crystal device

Semiconductor device, electro-optical device substrate, liquid crystal device substrate and manufacturing method therefor, liquid crystal device, and projection liquid crystal display device and electronic apparatus using the liquid crystal device

机译:半导体装置,电光装置用基板,液晶装置用基板及其制造方法,液晶装置以及使用该液晶装置的投射型液晶显示装置和电子设备

摘要

Methods and systems are provided for securely preventing cracking or peeling of an insulating film in the periphery of a cutting portion of cutting short-circuit wiring by etching in a substrate, such as a liquid crystal device substrate that includes short-circuit wiring for a measure against static electricity. In particular, in the liquid crystal device substrate, cutting holes are provided by etching in a first interlayer insulating film and a second interlayer insulating film, which cover short-circuit wiring provided as electrostatic measure wiring, for cutting the short-circuit wiring. An etching stop layer made of a single crystal silicon film having resistance to etching of the second interlayer insulating film is formed in a wider range than the cutting holes between the short-circuit wiring and the buried oxide film.
机译:提供了用于通过在包括用于测量的短路布线的液晶装置基板等基板中进行蚀刻来可靠地防止在切割短路布线的切割部的周围的绝缘膜的破裂或剥离的方法和系统。防静电。特别地,在液晶器件基板中,通过蚀刻第一层间绝缘膜和第二层间绝缘膜来设置切割孔,所述第一层间绝缘膜和第二层间绝缘膜覆盖设置为静电测量布线的短路布线,以切割短路布线。由耐腐蚀第二层间绝缘膜的单晶硅膜制成的腐蚀停止层形成在比短路布线和掩埋氧化膜之间的切割孔更宽的范围内。

著录项

  • 公开/公告号US2004109128A1

    专利类型

  • 公开/公告日2004-06-10

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORPORATION;

    申请/专利号US20030726610

  • 发明设计人 YUKIYA HIRABAYASHI;

    申请日2003-12-04

  • 分类号G02F1/136;

  • 国家 US

  • 入库时间 2022-08-21 23:18:59

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