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Hybrid namp;plus; and pamp;plus; gate-doped voltage variable capacitors to improve linear tuning range in voltage controlled oscillators

机译:混合n+和p+栅极掺杂电压可变电容器,以改善压控振荡器的线性调谐范围

摘要

A method for operating a wide band voltage controlled oscillator comprises using a control voltage to tune the capacitance of at least one hybrid n+ and p+ gate-doped voltage variable capacitor of the wide band voltage controlled oscillator. A hybrid voltage variable capacitor includes a substrate, a well adjacent to the substrate, a first and second set of contact elements adjacent to the well, a first channel layer adjacent to the well and bound by the first set of contact elements, a first insulating layer adjacent to the first channel layer, a first electrode adjacent to the first insulating layer, a second channel layer adjacent to the well and bound by the second set of contact elements, a second insulating layer adjacent to the second channel layer, and a second electrode adjacent to the second insulating layer.
机译:一种用于操作宽带压控振荡器的方法,包括使用控制电压来调节至少一个混合n&plus的电容。和p+宽带压控振荡器的栅极掺杂电压可变电容器。一种混合电压可变电容器,包括:衬底,与衬底相邻的阱,与阱相邻的第一和第二组接触元件,与阱相邻且由第一组接触元件界定的第一沟道层,第一绝缘层与第一沟道层相邻的第一绝缘层,与第一绝缘层相邻的第一电极,与阱相邻并被第二组接触元件束缚的第二沟道层,与第二沟道层相邻的第二绝缘层以及第二绝缘层电极与第二绝缘层相邻。

著录项

  • 公开/公告号US6737929B1

    专利类型

  • 公开/公告日2004-05-18

    原文格式PDF

  • 申请/专利权人 MOTOROLA INC.;

    申请/专利号US20020301943

  • 发明设计人 JYOTI MONDAL;YAN CUI;

    申请日2002-11-22

  • 分类号H03B50/80;H01L299/20;

  • 国家 US

  • 入库时间 2022-08-21 23:16:59

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