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Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements
Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements
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机译:具有减少了电路元件数量的高精度数据读取结构的薄膜磁存储器件
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摘要
In a data read operation, a selected memory cell and a reference memory cell are connected to complementary first and second data lines via complementary first and second bit lines, respectively. A differential amplifier supplies passing currents of the memory cell and the reference cell to complementary first and second data buses, and amplifies a passing current difference between the first and second data buses occurring corresponding to an electric resistance difference between the memory cell and reference cell to produce a voltage difference of a polarity corresponding to the level of the stored data of the selected memory cell between first and second nodes.
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