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Vapor growth method for metal oxide dielectric film and pzt film
Vapor growth method for metal oxide dielectric film and pzt film
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机译:金属氧化物介电膜和pzt膜的气相生长方法
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摘要
For forming a metal-oxide dielectric film having a perovskite type of crystal structure represented by ABO3 on a base conductor material using organometallic source gases, initial perovskite crystal nuclei or an initial amorphous layer having an amorphous structure are formed on the base conductor material under the first deposition conditions; and a film having a perovskite crystal structure is further grown on the initial crystal nuclei or the initial amorphous layer under the second deposition conditions. In the process, the first deposition conditions meet at least one of the requirements: (a) a lower substrate temperature than that in the second deposition conditions; and (b) a higher source gas pressure than that in the second deposition conditions. This process can be used to deposit a film such as PZT exhibiting a reduced leak current.
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