首页> 外国专利> Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal

Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal

机译:硅晶体的液相生长方法,太阳能电池的制造方法和硅晶体的液相生长装置

摘要

With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.
机译:关于硅晶体的液相生长方法,其中通过将衬底浸入溶剂中或使衬底与溶剂接触而在衬底上生长硅晶体,包含原料和/或掺杂剂的气体是至少一部分气体通过向其施加能量而分解后供给到溶剂中。以此方式,提供了用于硅晶体的液相生长方法,能够实现连续生长并且适合于批量生产的方法,用于太阳能电池的制造方法以及用于硅晶体的液相生长设备。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号