CHARGE DETECTOR SEMICONDUCTOR COMPONENT, SYSTEM COMPRISING A CHARGE DETECTOR SEMICONDUCTOR COMPONENT AND A REFERENCE SEMICONDUCTOR COMPONENT, WAFER, USE OF A WAFER, AND METHOD FOR THE QUALITATIVE AND QUANTITATIVE MEASUREMENT OF CHARGING OF A WAFER

摘要

The invention relates to a charge detector semiconductor component in the form of a structure provided on a semiconductor material, which component comprises a non-volatile storage cell in the form of a MOS field effect transistor with a transistor gate and a MOS capacitor with a capacitor gate. The invention further relates to a system comprising a charge detector semiconductor component and a reference semiconductor component. The invention further relates to a wafer as well as to the use of a wafer with a plurality of charge detector semiconductor elements and/or systems. Finally, the invention relates to a method for the qualitative and quantitative measurement of the charging of a wafer during processing of the wafer. According to the invention, it is possible to measure exactly the charge that has arisen during the processing of wafers and the manufacture of semiconductor components, in particular owing to plasma and ion implantation processes. The process can be continuously monitored, and the structure can be manufactured in a standard CMOS technology.