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Cascade cryogenic thermoelectric cooler for cryogenic and room temperature applications

机译:级联低温热电冷却器,适用于低温和室温应用

摘要

A cascade thermoelectric cooler designed to cool to cryogenic temperatures of 30 to 120 K integrates high performance\high-ZT BixSb2−xTe3 and Bi2Te3−xSe3-based super-lattice-structure thin-film thermoelectric devices with a bulk-material based thermoelectric cooler including plural cascaded cold stages with each successive cascaded cold stage able to cool to a progressively lower temperature. Each cold stage in the bulk-material thermoelectric cooler includes a heat source plate, a heat sink plate, a p-type thermoelectric, and a n-type thermoelectric. Moreover, the thin-film thermoelectric cooler can have multiple stages in which each stage contains a heat source plate, a heat sink plate, a p-type super-latticed thermoelectric element, and a n type super-latticed thermoelectric element. By bonding an output heat source plate on the thin-film thermoelectric cooler to an input heat sink plate on the bulk-material thermoelectric cooler, the integration of the thin-film thermoelectric with the bulk-material-based thermoelectric yields a cascade thermoelectric cooler wherein the bulk-material-based thermoelectric cooler cools to 160 K and the thin-film thermoelectric device cools to cryogenic temperatures between 70 and 120 K. Another level of thin-film super-lattice integration can achieve temperatures of 30 K. Alternatively, the integration of a high ZT thin-film superlattice thermoelectric cooler on a multi-staged bulk-material-based thermoelectric cooler can produce a higher performance non-cryogenic cooler.
机译:设计用于冷却至30至120 K低温的级联热电冷却器,集成了高性能\ high-ZT Bi x Sb 2&min; x Te 3 和Bi 2 Te 3&min ;; x Se 3 基超晶格结构薄膜热电器件,并具有基于块状材料的热电器件冷却器,包括多个级联的冷段,每个连续的级联的冷段都能冷却到逐渐降低的温度。散装材料热电冷却器中的每个冷段包括热源板,散热板,p型热电和n型热电。此外,薄膜热电冷却器可以具有多个级,其中每个级包含热源板,散热板,p型超晶格热电元件和n型超晶格热电元件。通过将薄膜热电冷却器上的输出热源板粘结到散装材料热电冷却器上的输入散热板,将薄膜热电与基于散装材料的热电集成在一起就可以形成级联热电冷却器,其中基于散装材料的热电冷却器冷却至160 K,而薄膜热电设备冷却至70至120 K的低温。另一级薄膜超晶格集成可以达到30 K的温度。在基于多级散装材料的热电冷却器上使用高ZT薄膜超晶格热电冷却器可以产生更高性能的非低温冷却器。

著录项

  • 公开/公告号US6722140B2

    专利类型

  • 公开/公告日2004-04-20

    原文格式PDF

  • 申请/专利权人 RESEARCH TRIANGLE INSTITUTE;

    申请/专利号US20030340652

  • 发明设计人 RAMA VENKATASUBRAMANIAN;

    申请日2003-01-13

  • 分类号F25B210/20;

  • 国家 US

  • 入库时间 2022-08-21 23:14:19

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