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Method and system for providing source/drain-gate spatial overlap engineering for low-power devices
Method and system for providing source/drain-gate spatial overlap engineering for low-power devices
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机译:为低功率设备提供源极/漏极门空间重叠工程的方法和系统
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摘要
A method and system for providing a semiconductor device on a substrate are disclosed. The method and system include providing a tunneling barrier on the substrate and providing at least one gate on the tunneling barrier. The at least one of gate includes a first edge, a second edge and a base. The method and system further include providing a source and/or a drain for the at least one gate. The source and/or a drain are in proximity to the first edge or the first and second edges of the at least one gate. The at least one gate, the source and/or drain or both the at least one gate and the source and/or drain are configured such that source and/or drain do not substantially overlap the at least one gate at the base of the at least one gate.
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