首页>
外国专利>
Methods for detecting incidence orthogonality of a patterned beam in charged-particle-beam (CPB) microlithography, and CPB microlithography systems that perform same
Methods for detecting incidence orthogonality of a patterned beam in charged-particle-beam (CPB) microlithography, and CPB microlithography systems that perform same
In the context of charged-particle-beam (CPB) microlithography methods and systems, methods are disclosed for detecting the incidence orthogonality of a patterned beam on the lithographic substrate. In an embodiment, the position of reticle-fiducial-mark images, as formed on the substrate stage at a position Z1, are detected at two lateral positions of a corresponding reticle fiducial mark. A distance L1 between the images is determined. Then, the substrate stage is moved to a position Z2, at which the position of reticle-fiducial-mark images are detected at two lateral positions of the corresponding reticle fiducial mark. A distance L2 between the images is determined. The incidence-orthogonality error &Dgr;&thgr; is calculated by substitution into &Dgr;&thgr;=(L1−L2)/2&Dgr;H. The projection-optical system of the CPB microlithography apparatus is adjusted so that &Dgr;&thgr;=0.
展开▼
机译:在带电粒子束(CPB)微光刻方法和系统的背景下,公开了用于检测图案化光束在光刻衬底上的入射正交性的方法。在一个实施例中,在基板台上的位置Z 1 b>上形成的掩模版基准标记图像的位置在相应的掩模版基准标记的两个横向位置处被检测。确定图像之间的距离L 1 B>。然后,将衬底台移动到位置Z B 2,在该位置处,在对应的掩模版基准标记的两个横向位置处检测出掩模版基准图像的位置。确定图像之间的距离L 2 B>。入射正交误差&Dgr;&thgr;通过代入&Dgr;等于((L 1 B>&min ;; L 2 B>)/ 2&Dgr; H来计算。调节CPB微光刻设备的投影光学系统,以使得&等于0。
展开▼