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BPSG chemical mechanical planarization process control for production control and cost savings

机译:BPSG化学机械平面化工艺控制可实现生产控制并节省成本

摘要

The polishing of a layer of boro-phosphate-silicate-glass (BPSG) is not easy to control as a result of CMP slurry chemistry effects, the doping concentration of the layer of BPSG and the heat treatment to which the layer of BPSG has been submitted prior to the process of CMP. The invention has developed a CMP endpoint detection mode that minimizes variations of the process of CMP of a layer of BPSG by these factors. An endpoint detection algorithm has been developed, which has been applied and has proven to significantly improve a statistical measure, which reflects the process deviation from the process mean for the process of CMP of a layer of BPSG.
机译:由于CMP浆液的化学作用,BPSG层的掺杂浓度以及BPSG层已进行的热处理,对硼磷酸盐-硅酸盐玻璃(BPSG)层的抛光不容易控制。在CMP流程之前提交。本发明已经开发了一种CMP端点检测模式,该模式最小化了由这些因素引起的BPSG层的CMP过程的变化。已经开发了一种端点检测算法,该端点检测算法已被应用并且已被证明可以显着改善统计量度,该统计量度反映了BPSG层CMP的过程与过程平均值的偏离。

著录项

  • 公开/公告号US6712669B1

    专利类型

  • 公开/公告日2004-03-30

    原文格式PDF

  • 申请/专利权人 TAWAIN SEMICONDUCTOR MANUFACTURING COMPANY;

    申请/专利号US20010784245

  • 发明设计人 CHIN-CHU CHANG;

    申请日2001-02-15

  • 分类号B24B490/00;

  • 国家 US

  • 入库时间 2022-08-21 23:13:32

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