Semiconductor laser diode for controlling width of carrier inflow path

摘要

A semiconductor laser diode for controlling the width of a carrier inflow path is provided. The semiconductor laser diode includes a p-type material layer for lasing between a p-type electrode and an n-type electrode, an active layer, and an n-type material layer. The p-type electrode restrictively contacts the p-type material layer. A carrier inflow width controller is included to control the width of a path of carriers flowing from the p-type electrode into the active layer.