首页> 外国专利> BYPASS CAPACITOR METHODS FOR ACHIEVING A DESIRED VALUE OF ELECTRICAL IMPEDANCE BETWEEN PARALLEL PLANAR CONDUCTORS OF AN ELECTRICAL POWER DISTRIBUTION STRUCTURE, AND ASSOCIATED ELECTRICAL POWER DISTRIBUTION STRUCTURES

BYPASS CAPACITOR METHODS FOR ACHIEVING A DESIRED VALUE OF ELECTRICAL IMPEDANCE BETWEEN PARALLEL PLANAR CONDUCTORS OF AN ELECTRICAL POWER DISTRIBUTION STRUCTURE, AND ASSOCIATED ELECTRICAL POWER DISTRIBUTION STRUCTURES

机译:用于实现配电结构的平行平面导体与相关配电结构之间的所需电阻抗值的旁路电容器方法

摘要

Several methods are presented for achieving a desired value of electrical impedance between parallel planar conductors of an electrical power distribution structure by electrically coupling multiple bypass capacitors between the planar conductors. The methods include bypass capacitor selection criteria based upon simulation results. An exemplary electrical power distribution structure produced by one of the methods includes a pair of parallel planar conductors separated by a dielectric layer, and n discrete electrical capacitors electrically coupled between the planar conductors, where n2. The n capacitors have substantially the same capacitance C, mounted resistance Rm, and mounted inductance Lm. The electrical power distribution structure achieves an electrical impedance Z at a mounted resonant frequency fm-res of the capacitors. The mounted resistance Rm of each of the n capacitors is substantially equal to (nZ). The mounted inductance Lm of each of the n capacitors is less than or equal to (0.2n0h), where 0 is the permeability of free space, and h is a distance between the planar conductors. The mounted resistance Rm of each capacitor is the sum of an equivalent series resistance (ESR) of the capacitor and the electrical resistances of all conductors coupling the capacitor between the planar conductors. The mounted inductance Lm of each capacitor is the electrical inductance resulting from the coupling of the capacitor between the planar conductors. The mounted resonant frequency m-res results from capacitance C and mounted inductance Lm.
机译:提出了几种用于通过在平面导体之间电耦合多个旁路电容器来在配电结构的平行平面导体之间实​​现期望的电阻抗值的方法。该方法包括基于仿真结果的旁路电容器选择标准。通过一种方法产生的示例性电力分配结构包括由介电层分隔的一对平行的平面导体,以及电耦合在平面导体之间的n个分立的电容器,其中n2。 n个电容器具有基本相同的电容C,安装的电阻R m 和安装的电感L m 。配电结构在电容器的安装谐振频率f m-res 下获得电阻抗Z。 n个电容器中的每个电容器的安装电阻R m 基本上等于(nZ)。 n个电容器中每个电容器的安装电感L m 小于或等于(0.2n 0 h),其中 0 是磁导率自由空间的距离,h是平面导体之间的距离。每个电容器的安装电阻R m 是电容器的等效串联电阻(ESR)与在平面导体之间耦合电容器的所有导体的电阻之和。每个电容器的安装电感L m 是由于电容器在平面导体之间的耦合而产生的电感。安装的谐振频率 m-res 由电容C和安装的电感L m 产生。

著录项

  • 公开/公告号US6727774B1

    专利类型

  • 公开/公告日2004-04-27

    原文格式PDF

  • 申请/专利权人 SUN MICROSYSTEMS INC.;

    申请/专利号US20000596863

  • 发明设计人 ISTVAN NOVAK;

    申请日2000-06-19

  • 分类号H01P50/00;H01P12/40;

  • 国家 US

  • 入库时间 2022-08-21 23:13:14

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号