Method and circuit configuration for generating a data strobe signal for very fast semiconductor memory systems

摘要

A method is provided for generating a data strobe signal in order to transmit the latter through a signal line with tristate behavior from/to a semiconductor memory module for writing/reading data to/from the semiconductor module. The data strobe signal, in response to the outputting or the reception of a read/write command, proceeding from the tristate state, is clocked with a predetermined clock frequency after a short preamble period. The data strobe signal is occupied, in the preamble period, by one or more pulses corresponding to the clock frequency. In very fast memory systems, this avoids a temporal offset between a system clock and data acceptance controlled by data strobe signal pulses. A semiconductor circuit configuration having a semiconductor circuit module with a circuit for generating such a data strobe signal, is also provided.