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Method to fabricate optimal HDD with dual diffusion process to optimize transistor drive current junction capacitance, tunneling current and channel dopant loss
Method to fabricate optimal HDD with dual diffusion process to optimize transistor drive current junction capacitance, tunneling current and channel dopant loss
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机译:利用双扩散工艺制造最佳硬盘的方法,以优化晶体管驱动电流结电容,隧穿电流和沟道掺杂剂损耗
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摘要
Methods are discussed for forming a transistor comprising a source/drain region having both a graded HDD portion and a sharp HDD portion in a semiconductor substrate. The method comprises a dual diffusion process, wherein a gate structure is provided over the semiconductor substrate having an offset spacer associated therewith. A first dopant material is implanted around the gate structure in the source/drain area to form a grade-HDD region in the substrate that is aligned to the offset spacer. A sidewall spacer is formed around the gate structure and covers the offset spacer. A second dopant material is then implanted in the source/drain area to form a source/drain region in the substrate aligned to the sidewall spacer, and the device is thermally processed in a first anneal. The sidewall spacer and the offset spacer are removed from the gate structure. A third dopant material is implanted in the source/drain area to form a sharp HDD region aligned to the gate structure, and the device is flash annealed in a second anneal.
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