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RUBIDIUM TITANYL ARSENATE-SILVER GALLIUM SELENIDE TANDEM OPTICAL PARAMETRIC OSCILLATOR

机译:锡钛酸砷酸银-硒化镓串联光学参量振荡器

摘要

An arrangement (10) for efficiently generating tunable pulsed laser output at 8-12 microns. The arrangement (10) includes a laser (12), a first optical parametric oscillator (14) of unique design, and a second optical parametric oscillator (22). The first oscillator (14) is constructed with an energy shifting crystal (20) and first and second reflective elements (16) and (18) disposed on either side thereof. Energy from the laser (12) at a first wavelength is shifted by the crystal and output at a second wavelength. The second wavelength results from a secondary process induced by a primary emission of energy at a third wavelength, the third wavelength resulting from a primary process generated from the first wavelength in the crystal. Mirror coatings are applied on the reflective elements (16 and/or 18) for containing the primary emission and enhancing the secondary process. The second optical parametric oscillator (22) then shifts the energy output by the first OPO (14) at the second wavelength to the desired fourth wavelength. In the illustrative embodiment, the first optical parametric oscillator (14) includes an x-cut rubidium titanyl arsenate crystal (20) and the second optical parametric oscillator (22) includes a silver gallium selenide crystal. The first wavelength is approximately 1.06 microns, the second wavelength is approximately 3.01 microns, the third wavelength is approximately 1.61 microns, and the fourth wavelength is in the range of 8-12 microns.
机译:一种有效地产生8-12微米可调脉冲激光输出的装置( 10 )。装置( 10 )包括激光器( 12 ),设计独特的第一光学参量振荡器( 14 )和第二光学参量振荡器( 22 )。第一振荡器( 14 )由能量转换晶体( 20 )以及第一和第二反射元件( 16 )和( 18 )放置在其两侧。晶体将来自第一波长的激光( 12 )的能量转移,并以第二波长输出。第二波长是由在第三波长的能量的一次发射引起的次级过程产生的,第三波长是由晶体中的第一波长产生的初级过程产生的。在反射元件( 16 和/或 18 )上涂覆镜面涂层,以包含一次发射并增强二次过程。然后,第二光学参量振荡器( 22 )将第一OPO( 14 )在第二波长处输出的能量转换为所需的第四波长。在说明性实施例中,第一光学参量振荡器( 14 )包括x切割砷酸钛氧钛晶体( 20 )和第二光学参量振荡器( 22 )包括硒化银镓晶体。第一波长约为1.06微米,第二波长约为3.01微米,第三波长约为1.61微米,第四波长在8-12微米的范围内。

著录项

  • 公开/公告号IL160226D0

    专利类型

  • 公开/公告日2004-07-25

    原文格式PDF

  • 申请/专利权人 RAYTHEON COMPANY;

    申请/专利号IL20030160226

  • 发明设计人

    申请日2003-01-15

  • 分类号7G02FA;

  • 国家 IL

  • 入库时间 2022-08-21 23:10:28

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