首页> 外国专利> CHROMIUM DIOXIDE (CRO2) AND COMPOSITES OF CHROMIUM DIOXIDE AND OTHER OXIDES OF CHROMIUM SUCH AS CRO2/CR2O3 AND CRO2/CR2O5 AND PROCESS FOR MANUFACTURING THE SAME

CHROMIUM DIOXIDE (CRO2) AND COMPOSITES OF CHROMIUM DIOXIDE AND OTHER OXIDES OF CHROMIUM SUCH AS CRO2/CR2O3 AND CRO2/CR2O5 AND PROCESS FOR MANUFACTURING THE SAME

机译:二氧化铬(CRO2)和二氧化铬及铬的其他氧化物的复合物,例如Cro2 / CR2O3和CRO2 / CR2O5,及其制造工艺

摘要

A novel process for preparing chromium dioxide of substantially high purity as well as composites of CrO2/Cr2O3 and CrO2/Cr2O5 following a sequence of simple steps. The process does not require pressure as a control parameter during the process of synthesis. No chemical modifier has been used to bring down the working pressure during synthesis. Fairly hard sintered pellets of CrO2 can be obtained without introducing any detectable impurity phase that usually appears during the process of sintering. Further, CrO2/Cr2O3 and CrO2/Cr2O5 composites have also been prepared where the fraction of insulating Cr2O3 or Cr2O5 in metallic CrO2 can be easily controlled. Significant negative magnetoresistance is found in pure CrO2 (5 % MR) as well as CrO2/Cr2O3 (33 % MR) composites near room temperature. The MR studies on the CrO2 /Cr2O5 composites have been done and significant negative MR (22 %) has been found in CrO2/Cr2O5 composites near room temperature.
机译:按照一系列简单的步骤,一种制备高纯度二氧化铬以及CrO2 / Cr2O3和CrO2 / Cr2O5的复合物的新颖方法。在合成过程中,该过程不需要压力作为控制参数。尚未使用化学改性剂降低合成过程中的工作压力。无需引入通常在烧结过程中出现的任何可检测到的杂质相,即可获得相当坚硬的CrO2烧结颗粒。此外,还已经制备了CrO 2 / Cr 2 O 3和CrO 2 / Cr 2 O 5复合材料,其中可以容易地控制金属CrO 2中的绝缘Cr 2 O 3或Cr 2 O 5的比例。在接近室温的纯CrO2(5%MR)和CrO2 / Cr2O3(33%MR)复合材料中发现了显着的负磁阻。已经完成了对CrO2 / Cr2O5复合材料的MR研究,在室温附近的CrO2 / Cr2O5复合材料中发现了显着的负MR(22%)。

著录项

  • 公开/公告号AU2003276682A1

    专利类型

  • 公开/公告日2004-03-19

    原文格式PDF

  • 申请/专利权人 TATA INSTITUTE OF FUNDAMENTAL RESEARCH;

    申请/专利号AU20030276682

  • 发明设计人 ARUN KUMAR NIGAM;ASHNA BAJPAI;

    申请日2003-08-22

  • 分类号C01G37/02;C01G37/027;G11B5/706;H01F1/40;

  • 国家 AU

  • 入库时间 2022-08-21 23:02:15

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