SELF ALIGNED SHALLOW TRENCH ISOLATION WITH IMPROVED COUPLING COEFFICIENT IN FLOATING GATE DEVICES

摘要

The invention provides the method for on substrate, making floating gate N-type semiconductor N device and the device of making thus with surface (2).This method comprises: formation comprises dielectric film (4) on substrate surface, the lamination of the first floating gate material layer (6) and sacrificial material layer (8), pass this lamination and in substrate (2), form at least one isolated area (18), the first floating gate material layer (6) has top surface and sidewall (26) thus, remove expendable material (8), stay the cavity (20) that the top surface by the isolated area (18) and the first floating gate material layer (6) limits thus, and with second floating gate material layer (22) cavity filling (20), the first floating gate material layer (6) and the second floating gate material layer (22) form floating gate (24) jointly thus.