The present invention relates to a pull-up structure with variable strength, which combines a resistor network with N type MOS transistors. According to the invention, the pull up structure comprises a n-channel type MOSFET (51) with a resistor (52) in parallel. Alternatively, a resistor (54) is connected between the terminal of the pull up and a voltage supply. This allows the pull up to be varied to compensate for process and temperature variations around a predefined pull-up strength, and at the same time provides low parasitic capacitance and a good dynamic response of the pull-up structure.
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