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METHOD FOR GENERATING HIGH-CONTRAST IMAGES OF SEMICONDUCTOR SITES VIA ONE-PHOTON OPTICAL BEAMINDUCED CURRENT IMAGING AND CONFOCAL REFLECTANCE MICROSCOPY
METHOD FOR GENERATING HIGH-CONTRAST IMAGES OF SEMICONDUCTOR SITES VIA ONE-PHOTON OPTICAL BEAMINDUCED CURRENT IMAGING AND CONFOCAL REFLECTANCE MICROSCOPY
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机译:通过单光子光学束流成像和共焦反射显微镜生成半导体站点高对比度图像的方法
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摘要
A method is disclosed that permits the generation of exclusive high-contrast images of semiconductor sites in an integrated circuit sample (19). It utilizes the one-photon optical beam-induced current (1P-OBIC) image and confocal reflectance image of the sample that are generated simultaneously from one and the same excitation (probe) light beam that is focused on the sample (19). A 1P-OBIC image is a two-dimensional map of the currents induced by the beam as it is scanned across the circuit surface. 1P-OBIC is produced by an illuminated semiconductor material if the excitation photon energy exceeds the bandgap. The 1P-OBIC image has no vertical resolution because 1P-OBIC is linear with the excitation beam intensity. The exclusive high-contrast image of semiconductor sites is generated by the product of the 1P-OBIC image and the confocal image. High-contrast image of the metal sites are also obtained by the product of the complementary OBIC image and the same confocal image.
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