Method to remove copper contamination by using downstream oxygen and chelating agent plasma

摘要

A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxygen radical containing downstream plasma is provided from a first source (alternatively halogen (F₂, Cl₂, or Br₂) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxygen radical containing downstream plasma and vaporized chelating agent are mixed to form an oxygen radical containing downstream plasma / vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.