首页> 外国专利> HIGH RESISTANCE POLY(3,4- ETHYLENEDIOXYTHIOPHENE)/POLY(STYRENE SULFONATE) FOR USE IN HIGH EFFICIENCY PIXELLATED ELECTROLUMINESCENT DEVICES

HIGH RESISTANCE POLY(3,4- ETHYLENEDIOXYTHIOPHENE)/POLY(STYRENE SULFONATE) FOR USE IN HIGH EFFICIENCY PIXELLATED ELECTROLUMINESCENT DEVICES

机译:高效率的聚乙烯醇(3,4-乙二氧基二氧噻吩)/聚苯乙烯磺酸盐(POLY)

摘要

High resistance PEDT/PSS buffer layers are provided for use in electroluminescent devices such as, e.g., OLEDs. In accordance with another embodiment, there are provided OLEDs comprising high resistance PEDT/PSS buffer layers. In accordance with a further embodiment, methods have been developed for decreasing the conductivity of a PEDT/PSS layer cast from aqueous solution onto a substrate, by adding a cyclic ether co-solvent to the aqueous solution of PEDT/PSS prior to casting. In one embodiment, there are provided methods for decreasing the inherent conductivity of a PEDT/PSS layer cast onto a substrate so that this material can be used as an intermediate buffer layer in red, green, blue organic light emitting diodes (RGB OLEDs).
机译:提供高电阻PEDT / PSS缓冲层以用于电致发光器件,例如OLED。根据另一个实施例,提供了包括高电阻PEDT / PSS缓冲层的OLED。根据另一个实施方案,已经开发了通过在浇铸之前向PEDT / PSS的水溶液中添加环醚助溶剂来降低从水溶液浇铸到基材上的PEDT / PSS层的电导率的方法。在一个实施例中,提供了用于减小流延到衬底上的PEDT / PSS层的固有电导率的方法,使得该材料可用作红色,绿色,蓝色有机发光二极管(RGB OLED)中的中间缓冲层。

著录项

  • 公开/公告号WO2004063256A1

    专利类型

  • 公开/公告日2004-07-29

    原文格式PDF

  • 申请/专利权人 E. I. DU PONT DE NEMOURS AND COMPANY;ZHANG CHI;

    申请/专利号WO2004US00370

  • 发明设计人 ZHANG CHI;

    申请日2004-01-06

  • 分类号C08J7/04;C09D165/00;H01B1/12;H01L51/30;

  • 国家 WO

  • 入库时间 2022-08-21 22:55:14

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