首页>
外国专利>
METHOD AND APPARATUS FOR X-RAY TOPOGRAPHY OF SINGLE CRYSTAL INGOT
METHOD AND APPARATUS FOR X-RAY TOPOGRAPHY OF SINGLE CRYSTAL INGOT
展开▼
机译:单晶锭X射线断层扫描的方法和装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
The X-ray topograph image of an unprocessed silicon ingot which is manufactured by a Czochralski method is formed and dislocation of crystal is observed to find out the boundary between a dislocated region and a non-dislocated region. A scanning stage (34) is moved in the X-direction to bring the observed region of the silicon ingot (22) to an X-ray application position. The ingot (22) is ϕ-rotated around its axis so as to put its predetermined crystal lattice plane vertical. A moving stage (46) is moved in the Y-direction to align the rotation axis (49) of an ω rotary table (48) with the outer circumferential surface of the ingot (22). While diffracted X-rays are observed with an X-ray TV camera (26), accurate setting of the ω-rotation and the ϕ-rotation is performed. Then an X-ray recording medium (66) is placed on the scanning stage (34). X-rays emitted from an X-ray source (24) are applied to the outer circumferential surface of the ingot (22) and the scanning stage (34) is scanned over a predetermined scanning width while a diffraction image is recorded on the X-ray recording medium (66). Thus, an X-ray topography image can be formed and the boundary between a dislocated region and a non-dislocated region can be found.
展开▼