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High-power single-mode vertical-cavity surface-emitting laser

机译:大功率单模垂直腔面发射激光器

摘要

PURPOSE: A high-output single-mode VCSEL(Vertical Cavity Surface-Emitting Laser) device and a fabricating method thereof are provided to oscillate only a transverse mode by controlling independently a current flow region and an optical induction region. CONSTITUTION: A high-output single-mode VCSEL device includes an active region(23), an optical guide layer(24), the first bottom mirror layer(25), a current confinement layer(26), the second bottom mirror layer(27), an optical induction oxide layer(28), and a current confinement induction oxide layer(29). The active region(23) is formed with a top mirror layer and a quantum well layer, which are laminated on a semiconductor substrate. The optical guide layer(24) is formed by depositing an oxide layer on the active region. The first bottom mirror layer(25) is formed on the optical guide layer to form a part of the bottom mirror. The current confinement layer(26) is formed on the first bottom mirror layer to control a current flow region. The second bottom mirror layer(27) is formed on the current confinement layer to form a part of the bottom mirror. The optical induction oxide layer(28) and the current confinement induction oxide layer(29) are formed by performing an oxide formation process.
机译:目的:提供一种高输出单模VCSEL(垂直腔表面发射激光器)装置及其制造方法,以通过独立地控制电流流动区域和光感应区域来仅振荡横向模式。组成:一种高输出单模VCSEL器件,包括有源区(23),光导层(24),第一底部镜层(25),电流限制层(26),第二底部镜层( 27),光感应氧化层(28)和电流限制感应氧化层(29)。有源区(23)形成有顶部镜层和量子阱层,它们层叠在半导体衬底上。通过在有源区上沉积氧化物层来形成光导层(24)。第一底部镜层(25)形成在光导层上以形成底部镜的一部分。电流限制层(26)形成在第一底部镜层上以控制电流流动区域。在电流限制层上形成第二底部镜层(27),以形成底部镜的一部分。通过执行氧化物形成工艺来形成光感应氧化物层(28)和电流限制感应氧化物层(29)。

著录项

  • 公开/公告号KR20040025234A

    专利类型

  • 公开/公告日2004-03-24

    原文格式PDF

  • 申请/专利权人 RAYCAN CO. LTD.;

    申请/专利号KR20020057096

  • 发明设计人 LEE GI HWANG;NOH JEONG RAE;YOO BYEONG SU;

    申请日2002-09-18

  • 分类号H01S5/18;

  • 国家 KR

  • 入库时间 2022-08-21 22:49:27

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