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SELECTIVE OPERATION OF A MULTI-STATE NON-VOLATILE MEMORY SYSTEM IN A BINARY MODE

机译:二元模式下多态非易失性存储器系统的选择性操作

摘要

A flash non-volatile memory system that normally operates its memory cells in multiple storage states is provided with the ability to operate some selected or all of its memory cell blocks in two states instead. The two states are selected to be the furthest separated of the multiple states, thereby providing an increased margin during two state operation. This allows faster programming and a longer operational life of the memory cells being operated in two states when it is more desirable to have these advantages than the increased density of data storage that multi-state operation provides.
机译:通常在多个存储状态下操作其存储单元的闪存非易失性存储系统具有以下功能:能够以两种状态操作其选定的或全部存储单元块。选择这两个状态是多个状态中最远分开的状态,从而在两个状态操作期间提供增加的余量。当更希望具有这些优点而不是多状态操作提供的增加的数据存储密度时,这允许在两种状态下操作的存储单元更快的编程和更长的使用寿命。

著录项

  • 公开/公告号KR20040047835A

    专利类型

  • 公开/公告日2004-06-05

    原文格式PDF

  • 申请/专利权人 쌘디스크 코포레이션;

    申请/专利号KR20047003923

  • 发明设计人 천지안;

    申请日2004-03-17

  • 分类号G11C16/04;

  • 国家 KR

  • 入库时间 2022-08-21 22:48:51

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