首页> 外国专利> METHOD FOR MONITORING ANNEALING PROCESS BY MEASURING THERMAL WAVE VALUE OF PRE-ANNEALING PROCESS AND THERMAL WAVE VALUE OF POST-ANNEALING PROCESS

METHOD FOR MONITORING ANNEALING PROCESS BY MEASURING THERMAL WAVE VALUE OF PRE-ANNEALING PROCESS AND THERMAL WAVE VALUE OF POST-ANNEALING PROCESS

机译:测量退火前过程的热波值和退火后过程的热波值来监测退火过程的方法

摘要

Purpose: a kind of method is arranged to monitor an annealing process for monitoring an annealing process, by measuring a heat wave value of a heat wave value of a pre-annealing process and the annealing process of a postwelding and heat wave value being applied to reference data. Construction: a heat wave value of a pre-annealing process is by measuring from semi-conductive substrate (110). One annealing process is performed on semiconductor substrate (120). One heat wave value of the annealing process of one postwelding is by measuring from semiconductor substrate (130). The heat wave value of the annealing process of the heat wave value and postwelding of pre-annealing process is compared with reference data (140).
机译:目的:一种方法是通过测量预退火过程的热波值的热波值和焊接后的退火过程的热波值以及热波值,来监视退火过程,以监视退火过程。参考数据。构造:预退火过程的热波值是通过从半导体衬底(110)进行测量而得出的。在半导体衬底(120)上执行一种退火工艺。一种后焊接的退火过程的一个热波值是通过从半导体衬底(130)测量而得到的。将热波值的退火过程的热波值和预退火过程的后焊接与参考数据进行比较(140)。

著录项

  • 公开/公告号KR20040079511A

    专利类型

  • 公开/公告日2004-09-16

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030014388

  • 发明设计人 CHO HYEON MIN;PARK BYEONG HO;

    申请日2003-03-07

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-21 22:48:00

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