首页> 外国专利> METHOD FOR REMOVING ORGANIC MATERIAL RESIDUES IN MANUFACTURING IMAGING SEMICONDUCTOR DEVICE TO PREVENT TROUBLE DUE TO ORGANIC MATERIAL RESIDUES IN POST PROCESS

METHOD FOR REMOVING ORGANIC MATERIAL RESIDUES IN MANUFACTURING IMAGING SEMICONDUCTOR DEVICE TO PREVENT TROUBLE DUE TO ORGANIC MATERIAL RESIDUES IN POST PROCESS

机译:在制造成像半导体设备中去除有机材料残留物的方法,以防止在后期处理中由于有机材料残留物而造成的麻烦

摘要

Purpose: a kind of method is arranged to prevent the trouble due to organic substance residue, such as the polyimides of a chip pad in postpositive disposal in terms of semiconductor devices is imaged in manufacture one for removing organic substance residue by removing organic substance residue. Construction: the protective layer including an oxide layer (29) and a nitride layer, white layer (30) is formed in a wire. One filter array is on the protection layer. One planarization layer (32) includes that organic substance is formed in the color filter. One photoresist layer is formed in planarization layer. One chip pad is formed by etching planarization layer and opens wire. Photoresist layer is removed from planarization layer by using an Oxygen plasma ashing method. Photoresist residue (43) is removed from chip pad by using a stripping method.
机译:目的:一种防止有机物残留的方法,例如在制造半导体器件时对半导体器件进行正处置后芯片焊盘的聚酰亚胺成像,以通过去除有机物残留来去除有机物残留。构造:包括氧化物层(29)和氮化物层的保护层,在配线中形成白色层(30)。一个滤波器阵列位于保护层上。一个平坦化层(32)包括在滤色器中形成有机物质。在平坦化层中形成一层光致抗蚀剂。通过蚀刻平坦化层并打开导线来形成一个芯片焊盘。通过使用氧等离子体灰化方法从平坦化层去除光致抗蚀剂层。通过使用剥离方法从芯片焊盘去除光致抗蚀剂残余物(43)。

著录项

  • 公开/公告号KR20040079614A

    专利类型

  • 公开/公告日2004-09-16

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030014584

  • 发明设计人 CHO JEONG HYEON;

    申请日2003-03-08

  • 分类号H01L27/146;H01L21/339;

  • 国家 KR

  • 入库时间 2022-08-21 22:48:05

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