首页> 外国专利> SEMICONDUCTOR DEVICE HAVING DATA OUTPUT CIRCUIT FOR ADJUSTING SLEW RATE BETWEEN NORMAL MODE AND SLOW SLEW RATE MODE

SEMICONDUCTOR DEVICE HAVING DATA OUTPUT CIRCUIT FOR ADJUSTING SLEW RATE BETWEEN NORMAL MODE AND SLOW SLEW RATE MODE

机译:具有数据输出电路的半导体器件,用于调节正常模式和慢速摆率模式之间的摆率

摘要

PURPOSE: A semiconductor device having a data output circuit for adjusting a slew rate between a normal mode and a slow slew rate mode is provided to optimize the power consumption and prevent high-speed ringing by switching the slew rate between the normal mode and the slow slew rate mode. CONSTITUTION: A semiconductor device includes a first insulating gate type field effect transistor(PT10) and a second insulating gate type field effect transistor(NT10) which are connected between a power supply node and an output node. The first and the second insulating gate type field effect transistors are used for driving output nodes to the same direction according to output control signals. The first insulating gate type field effect transistor is formed on a first conductive type semiconductor substrate region. The second insulating gate type field effect transistor is formed on a second conductive type semiconductor substrate region.
机译:目的:提供一种具有数据输出电路的半导体器件,该数据输出电路用于在正常模式和慢速摆率模式之间调整压摆率,以通过在正常模式和慢速摆率之间切换压摆率来优化功耗并防止高速振铃摆率模式。构成:一种半导体器件,包括连接在电源节点和输出节点之间的第一绝缘栅型场效应晶体管(PT10)和第二绝缘栅型场效应晶体管(NT10)。第一和第二绝缘栅型场效应晶体管用于根据输出控制信号将输出节点驱动到相同方向。第一绝缘栅型场效应晶体管形成在第一导电型半导体衬底区域上。第二绝缘栅型场效应晶体管形成在第二导电型半导体衬底区域上。

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