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METHOD FOR MEASURING CONTAMINATED DEGREE OF PHOTOSENSITIVE FILM CONTAMINATED WITH AMINE

机译:测定被胺污染的感光膜污染度的方法

摘要

PURPOSE: A method for measuring the contaminated degree of a photosensitive film contaminated with amine is provided to quantitatively analyze the degree contaminated with amine. CONSTITUTION: A method for measuring the contaminated degree of a photosensitive film contaminated with amine comprises processes of forming a chemical amplification-type photosensitive film pattern(1); exposing the photosensitive film pattern by a whole-surface exposure process; contaminating an amine group with the photosensitive film pattern; executing a PEB(Post Exposure Bake) process; cutting both ends of the photosensitive film pattern; and developing the photosensitive film pattern on the middle part. The method for measuring the contaminated degree quantitatively analyzes PED(Post Exposure Delay) stability by calculating the area of the remaining photosensitive film pattern.
机译:目的:提供一种用于测量被胺污染的感光膜的污染程度的方法,以定量地分析被胺污染的程度。组成:一种测量被胺污染的感光膜的污染程度的方法,包括形成化学放大型感光膜图案的过程(1);通过全表面曝光工艺曝光感光膜图案;用光敏膜图案污染胺基;执行PEB(曝光后烘烤)过程;切割感光膜图案的两端;在中间部分显影感光膜图案。用于测量污染程度的方法通过计算剩余的感光膜图案的面积来定量地分析PED(曝光后延迟)稳定性。

著录项

  • 公开/公告号KR100424120B1

    专利类型

  • 公开/公告日2004-06-16

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR19960067443

  • 发明设计人 HONG SEONG EUN;BOK CHEOL GYU;

    申请日1996-12-18

  • 分类号G01N27/38;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:19

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