首页> 外国专利> Large Crystal Growing Apparatus Having Vertical and Horizontal Temperature Gradients and Growing Method thereof

Large Crystal Growing Apparatus Having Vertical and Horizontal Temperature Gradients and Growing Method thereof

机译:具有垂直和水平温度梯度的大型晶体生长装置及其生长方法

摘要

PURPOSE: A growing apparatus of large crystal having vertical and horizontal temperature gradients is provided which removes limitation on a ratio of diameter (or width) to length of a crystal, substantially reduces growing time, and easily controls shape of the crystal, and a growing method of the large crystal is provided. CONSTITUTION: The growing apparatus of large crystal having vertical and horizontal temperature gradients comprises a crucible(1) in which a certain space is secured, and on the bottom of which a seed crystal of a crystal to be grown is mounted; first and second heating units(2a,2b) each of which are arranged adjacently to both sides of the crucible so as to melt charging materials charged into the crucible as a power source is impressed to the heating units, and cool the molten materials in the state that temperature gradients are given in such a manner that temperature is gradually increased in vertical and horizontal directions on the basis of a part where the seed crystal is positioned during growing of the crystal; and a cooling means(3) which is installed at the lower part of the crucible to forcibly cool the lower part of the crucible during the growth of the crystal, wherein the growing apparatus grows the crystal in vertical and horizontal directions at the same time. The growing method of large crystal comprises the steps of melting the crystal material after charging a crystal material to be grown into a crucible on the bottom of which a seed crystal of a crystal to be grown is mounted; and growing the crystal by slowly descending temperature in the state that temperature gradients are given so that temperature is gradually increased horizontally and vertically on the basis of a part where the seed crystal of the crucible is positioned.
机译:目的:提供具有垂直和水平温度梯度的大晶体生长设备,该设备消除了晶体的直径(或宽度)与长度之比的限制,大大减少了生长时间,并易于控制晶体的形状和生长提供了大晶体的方法。组成:具有垂直和水平温度梯度的大晶体生长装置,包括一个坩埚(1),该坩埚中有一定的空间,在坩埚(1)的底部装有要生长的晶种。第一和第二加热单元(2a,2b)中的每一个都邻近于坩埚的两侧布置,以熔化充入电源的坩埚中充入的装料,将其压在加热单元上,并冷却坩埚中的熔融材料。陈述了这样的温度梯度:以在晶体生长期间籽晶位于其中的部分为基础,沿垂直和水平方向逐渐升高温度;冷却装置(3),其安装在坩埚的下部,以在晶体生长期间强制冷却坩埚的下部,其中,所述生长装置在垂直和水平方向上同时生长晶体。大晶体的生长方法包括以下步骤:在将要生长的晶体材料装入坩埚中之后将晶体材料熔化,在坩埚的底部安装有要生长的晶体的籽晶。然后,在设定温度梯度的状态下,通过缓慢降低温度来生长晶体,以使温度根据坩埚的种晶的位置而沿水平和垂直方向逐渐升高。

著录项

  • 公开/公告号KR100428699B1

    专利类型

  • 公开/公告日2004-04-27

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010011553

  • 发明设计人 이희춘;

    申请日2001-03-06

  • 分类号C30B11/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:12

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号