METHOD FOR FORMING SOG LAYER OF SEMICONDUCTOR DEVICE TO BASICALLY PREVENT CHANGE OF DRIVING THRESHOLD VOLTAGE AND VIA BOWING PHENOMENON

摘要

PURPOSE: A method for forming an SOG(spin on glass) layer of a semiconductor device is provided to prevent a driving threshold voltage of a semiconductor device from being changed by hydrogen ions by minimizing a collision of moisture and electrons. CONSTITUTION: A semiconductor substrate is heated by using an arc lamp positioned in the back surface of the semiconductor substrate to cure an SOG layer used for interlayer planarization during a semiconductor device fabricating process, and the moisture of the SOG layer is evaporated by using the heat provided by the arc lamp. After a predetermined interval of time for sufficiently evaporating the moisture of the SOG layer, electrons are implanted into the SOG layer by using an electron beam while the heat curing process is performed.