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PSEUDO-DIFFERENTIAL CURRENT SENSE AMPLIFIER WITH HYSTERESIS

机译:带滞回的伪微分电流感测放大器

摘要

Structures and methods for high speed signaling over single sided/ended current sense amplifiers are provided. The present invention introduces hysteresis within a pseudo-differential current sense amplifier and provides it with adjustable thresholds for the detection of valid signals coupled with the rejection of small noise current transients or reflections and ringing when using low impedance interconnections and/or current signaling. The circuit provides a fast response time in a low power CMOS environment, and conserves circuit design space by allowing for single sided/ended sensing.A first embodiment includes a current sense amplifier having a first amplifier and a second amplifier which are electrically coupled. Each amplifier includes a first transistor of a first conductivity type and a second transistor of a second conductivity type, where the first and second transistors are coupled at a drain region. A single signal input node is coupled to a source region of the first transistor of the first amplifier and receives a signal input current. A first signal output node is coupled to the drain region of the first and the second transistors in the second amplifier. The first signal output node is further coupled to a gate of a third transistor. A second signal output node is coupled to the drain region of the first and the second transistor in the first amplifier, and is further coupled to a gate of a fourth transistor. In one embodiment, a current mirror is coupled to the signal input node and the source regions of the first transistors in the first and the second amplifiers.
机译:提供了用于在单侧/端部电流感测放大器上进行高速信令的结构和方法。本发明在伪差动电流感测放大器内引入了磁滞,并为它提供了可调节的阈值,用于检测有效信号,并在使用低阻抗互连和/或电流信号发送时抑制小噪声电流瞬变或反射和振铃。该电路在低功率CMOS环境中提供了快速的响应时间,并通过允许单面/端部感测来节省电路设计空间。第一实施例包括具有电耦合的第一放大器和第二放大器的电流感测放大器。每个放大器包括第一导电类型的第一晶体管和第二导电类型的第二晶体管,其中第一晶体管和第二晶体管在漏极区耦合。单个信号输入节点耦合到第一放大器的第一晶体管的源极区域,并接收信号输入电流。第一信号输出节点耦合到第二放大器中的第一和第二晶体管的漏极区域。第一信号输出节点还耦合到第三晶体管的栅极。第二信号输出节点耦合到第一放大器中的第一晶体管和第二晶体管的漏极区域,并且还耦合到第四晶体管的栅极。在一个实施例中,电流镜耦合到第一和第二放大器中的信号输入节点和第一晶体管的源极区域。

著录项

  • 公开/公告号KR100441230B1

    专利类型

  • 公开/公告日2004-07-21

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20027002420

  • 发明设计人 포베스레나드;

    申请日2002-02-25

  • 分类号H03K3/45;

  • 国家 KR

  • 入库时间 2022-08-21 22:46:48

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